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  Datasheet File OCR Text:
 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3210
DESCRIPTION With TO-3PFa package Low collector saturation voltage High breakdown voltage APPLICATIONS For high speed switching applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM IB
Collector-base voltage

PARAMETER
CHA IN
Collector current Base current
Collector-emitter voltage
Emitter-base voltage
ES NG
Open emitter
Open base
MIC E
CONDITIONS
OND
TOR UC
VALUE 500 400 7 10 20 5
UNIT V V V A A A
Open collector
Collector current-peak
TC=25ae PC Collector power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature
100 W 3 150 -55~150 ae ae
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3210
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A;L=25mH IC=5A ;IB=1A IC=5A ;IB=1A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=5A ; VCE=5V IC=0.5A ; VCE=10V 15 8 MIN 400 1.0 1.5 100 100 |I |I TYP. MAX UNIT V V V A A
SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT
Switching times ton tstg tf
Fall time

CHA IN
Storage time
Turn-on time
E SEM NG
OND IC
TOR UC
11 1.0 2.5 1.0
MHz
|I |I |I
s s s
IC=5A; VCC=100V IB1=-IB2=1A
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3210

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance:A
0.30mm)
3


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